MOCVD precursor : Product : TOSHIMA Manufacturing Co.,Ltd. Materials System Division

β-diketone ligand

It is important to select combinations of MOCVD precursors because the selection criteria such as reactivity, vaporization, and thermo-stability is different from required characteristics of films such as surface, electric, and mechanical properties.

Toshima has been developing and merchandising various types of MOCVD precursors in response to customers' needs. Especially, we focus on MOCVD precursors used for oxides.

By change of structure of β-diketone ligand or DPM-complex, we develop the materials with various physical properties.

Minimum unit for orders is 5 grams with not only a glass ample but a SUS cylinder following customers' request. Also, in collaboration with our research-partner, Meisei University, we analyze MOCVD precursors on how thin-film is formed.

Further, after investigation of MOCVD precursors, we make presentations for our academic papers in various conferences.

Line of elements

H

He

Li

Be

B

C

N

O

F

Ne

Na

Mg

Al

Si

P

S

Cl

Ar

K

Ca

Sc

Ti

V

Cr

Mn

Fe

Co

Ni

Cu

Zn

Ga

Ge

As

Se

Br

Kr

Rb

Sr

Y

Zr

Nb

Mo

Tc

Ru

Rh

Pd

Ag

Cd

In

Sn

Sb

Te

I

Xe

Cs

Ba

Ln

Hf

Ta

W

Re

Os

Ir

Pt

Au

Hg

Tl

Pb

Bi

Po

At

Rn

Fr

Ra

La

Ce

Pr

Nd

Pm

Sm

Eu

Gd

Tb

Dy

Ho

Er

Tm

Yb

Lu

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Vaporization and resolution properties are changed by structure differences.

Materials	m.p.(°C)	Solubility
		Toluene Butyl	Acetate	THF
Zn(TMOD)2	48	S	A	S
Zn(DPM)2	141	A	B	A
Zn(IBPM)2	<20	A	A	A
Zn(DIBM)2	80	S	A	S
Zn(acac)2	138	G	G	G

S : >1mol/l　A : 1-0.5mol/l　B : 0.5-0.33mol/l　C : 0.33-0.25mol/l　D : 0.25-0.2mol/l
E : 0.2-0.15mol/l　F : 0.15-0.1mol/l　G : <0.1mol/l

Melting point and solubility are largely changed by structure differences.

Material temperature dependency of
Co deposition speed in CVD process.

TG data of In complex in Ar flow

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