TAOS (Transparent amorphous oxide semiconductors) is received a lot of attention as post-amorphous silicon.
Research for TAOS is proceeding to utilize high electrical properties and optical transmittance.
InGaZnOx, one of TAOS, gains its popularity as the material for TFT semiconductors to control e-papers, LCDs, and OLEDs.
The thin film sputtered this material can not only has superior electrical properties as 1-10cm2 / Vs but forms almost perfect transparent layer.
Since IGZO film can be formed by the low temperature process that ranges from room temperature to 150 degrees Celsius, it is applicable for substrates, such as plastics, not suitable for high temperature process.
Such the features make possible the realization of technical performances for electronic papers and other transparent devices.
Toshima developed the InGaZnOx sputtering target with outstanding properties.
The Sheet Resistance of Oxygen Flow Rate Characteristics
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The Sheet Resistance of Oxygen Flow Rate Characteristics
