Joint research & publication of papers : Technical : TOSHIMA Manufacturing Co.,Ltd. Materials System Division

Joint research & publication of papers

Toshima collaborate proactively with companies, universities, and laboratories developing new technology.

Many technical reports with our materials are published.

Also, we are promoting joint researches in the frontier fields. Now we introduce a part of reports.

Joint research in The Japan Society of Applied Physics 71th autumn annual meeting (2010)

Room temperature PLD growth and functionalization of nickel and magnesium oxide solid solution (111) epitaxial thin films

Tokyo Institute of Technology / TOSHIMA Manufacturing Co., / NAMIKI Precision Jewel Co., / Tohoku Univ. / Patent Attorne

Low temperature growth of Rare-earth element doped NiO epitaxial thin films by PLD

Tokyo Institute of Technology / TOSHIMA Manufacturing Co., / NAMIKI Precision Jewel Co., / Patent Attorney

Joint research in The Japan Society of Applied Physics 57th spring annual meeting (2010)

Laser MBE fabrication of functional boride epitaxial thin films with compositional modulation or buffer layered

Tokyo Institute of Technology / Toshima Manufacturing / Kanagawa Industrial Technology Center / Patent Attorney

Room temperature PLD fabrication and characterization of magnesium and nickel oxide solid solution epitaxial thin films

Tokyo Institute of Technology / TOSHIMA Manufacturing Co., / NAMIKI Precision Jewel Co., / Patent Attorney

Pulse laser ablation of mica target for thin film synthesis

Tokyo Institute of Technology / YAMAGUCHI MICA Co., / TOSHIMA Manufacturing Co., / Patent Attorney

Joint research in The Japan Society of
Applied Physics 70th autumn annual meeting (2009)

Fabrication and evaluation of NiO epitaxial film doped high density Li with room temperature PLD.

Tokyo Institute of Technology / Kanagawa Industrial Technology Center / Toshima Manufacturing

Joint research in MRS (Material Research Society) (2008)

Fabrication and Characterization of Electrically Functional Lanthanum Hexaboride Thin Films on Ultrasmooth Sapphire Substrates

Department of Innovative and Engineered Materials, Tokyo Institute of Technology1 / TOSHIMA Manufacturing Company Limited2,

Yushi Kato1 / Yusaburo Ono1 / Yasuyuki Akita1 / Makoto Hosaka1 / Naoki Shiraishi1 / Nobuo Tsuchimine2 / Susumu Kobayashi2 / Mamoru Yoshimoto1

This is about technical paper with using our material(sputtering target) for thin-film.

Sputterring formation of p-type SnO thin-film transistor on glass toward oxide complimentary circuits

Canon Inc.1 / Frontier Research Center2 / Materials and Structures Laboratory3

Hisato Yabuta1 / Nobuyuki Kaji1 / Ryo Hayashi1 / Hideya Kumomi1 / Kenji Nomra2 / Toshio Kamiya3 / Masahiro Hirano2 / and Hideo Hosono2.3

pp : 072111 1-3

Technical reports with our thermoelectric materials

Bi-Te

Manufacture and evaluate Bi-Te type thin-film by pulse-laser deposition method.

Haruhiko Ohara* / Jun Yamamoto / Kazuo Ueno

2006, Thermoelectric society third conference. Lecture No.S10-1

Evaluation of homogeneity of Bi2Te3-based materials prepared by Hot-Press Method

AIST, ULVAC-RIKO,Inc.

Thermoelectric society 6th conference (2009)

Y-Sr2TiO4

(Collaborative-research with AIST) Thermoelectric properties of Y-doped Sr-Ti-O oxide. AIST, Toshima Mfg.

Manufacturing Co., Ltd.

Haruhiko Ohara / Nobuo Tsuchimine / Fumihide Motobayashi / Jun Yamamoto / Tetsutora Li

Kazuo Ueno. 2005. Thermoelectrics society 2nd conference. Lecture No.S2-4.

Technical reports with our thermoelectric materials

Material :
  • LaNiO3 / (RE)NiO3 / La(TMOD)3 / Sm(TMOD)3 / Nd(TMOD)3 / Pr(TMOD)3 / Ni(TMOD)2
Preparation of LaNiO3 Thin Films by Liquid-Delivery MOCVD

Trans. Mater. Res. Soc. Jpn., 30, 1065 (2005).

Preparation of (RE)NiO3 thin films as an electrode by liquid-delivery MOCVD

EUROCVD-15 Proceedings of the International Symposium, p826 (2005).

BiFeO3

Material :
  • Bi(p-Tol)3 / Bi(p-Tol)3 / Fe(TMOD)3 / Fe(DPM)3 / Fe(IBPM)3 / Fe(DIBM)3 / FeCp2 / Fe(MeCp)3
Evaluation of Metalorganic Precursors for Preparing BiFeO3 Thin Films by Liquid Delivery Chemical Vapor Deposition

Integrated Ferroelectrics, 81, 281 (2006).

(Bi, La)4Ti3O12 / (Bi, Nd)4Ti3O12

Material :
  • Bi(p-Tol)3 / La(TMOD)3 / Nd(TMOD)3 / Ti(Oi-Pr)2(DPM)2 / La(TMOD)3phen / Nd(TMOD)3phen
Low Temperature Preparation of (Bi,Nd)4Ti3O12 Thin Films by Liquid-Delivery MOCVD Using Neodymium Precursors with High Deposition Efficiency

Integrated Ferroelectrics, 81, 271 (2006).

Deposition control of La in the Preparation of (Bi, La)4Ti3O12 Films by Liquid-delivery MOCVD

Trans. Mater. Res. Soc. Jpn., 31, 177 (2006).

ZnO

Material :
  • Zn(IBPM)2 / Zn(TMOD)2 / Zn(DIBM)2 / Ga(IBPM)3 / Ga(TMOD)3 / Ga(DIBM)3 / Al(IBPM)3 / Al(DIBM)3
Preparation of trivalent metal doped ZnO thin films by liquid-delivery MOCVD

EUROCVD-15 Proceedings of the International Symposium, p818 (2005).

Preparation of Al doped ZnO thin films by Liquid-Delivery MOCVD

Trans. Mater. Res. Soc. Jpn., 31, 1021 (2006).

YBa2Cu3Ox / (RE)Ba2Cu3Ox

Material :
  • Y(TMOD)3 / Sm(TMOD)3 / Gd(TMOD)3 / Yb(TMOD)3 / Ba(TMOD)2 / Cu(EDMOD)2
Preparation of YBCO Thin Film by MOCVD Method Using New Liquid Metal Organic Precursors

IEEE Transactions on Applied Superconductivity, 9, 2367 (1999).

Rare Earth Element Complexes as a Liquid Precursor for (RE)Ba2Cu3Oy Thin Film by MOCVD

Advances in Cryogenic Engineering (Materials), 46, 489 (2000).

In2O3

Material :
  • In(DIBM)3 / In(DPM)3 / In(TMOD)3 / In(IBPM)3 / In(acac)3
Evaluation of Some Indium beta-Diketonates as a Precursor for Preparing In2O3 Thin Films by MOCVD

Trans. Mater. Res. Soc. Jpn., 29, 1479 (2004).

to TOP

Technical