Thermoelectric material attracts attention as efficient use of exhaust heat. Thermoelectric materials are classified by temperature such as low temperature, room temperature, middle temperature, and high temperature.
Companies and universities develop them in order to achieve over performance index ZT=1.
Thermoelectric material integrated into electric-generating modules and peltier devices is expected to generate clean energy and to save energy.
We have developed thermoelectric material for over 10 years so that we achieve superior performance for joint researches such as AIST.
Metal base
N type
- Bi2Te3 and desired composition / doping type
- CeSb2.85Te0.15 and desired composition / doping type
- Mg2Si and desired composition / doping type
- Other materials
P type
- Bi0.3Sb1.7Te3 and desired composition / doping type
- CoSb3 and desired composition / doping type
- MnSi1.73 and desired composition / doping type
- Other materials
Oxide base
- NaxCoOy base
- Ca3Co4O9 base
- SrTiO3 (doping type)
- Other materials
Not only normal thermoelectric material but doping type and displaced type are available following customers' needs
Junction type
- Bi2Te3 / Junction(particular material) / CoSbTe base
- BiSbTe / Junction(particular material) / CoSb3 base
- Electrode / Bi base or Co base / Electrode
- Electrode / Supplied or developing material / Electrode
Feel free to ask us about sintering supplied materials, size of thermoelectric elements, and composition of material
Evaluation of homogeneity of Bi2Te3-based materials prepared by Hot-Press Method
Group A is evaluation by AIST、Group B is evaluation by ULVAC-RIKO,Inc.
Toshima Manufacturing prepared Bi2Te3 (N type) and Bi0.3Sb1.7Te3 (P type).
| Type | Group | 50℃(323K) | |||
|---|---|---|---|---|---|
| ρ 10-5Ωm |
S 10-6V/K |
S2/ρ 10-3W/mK2 |
|||
| P | A | AVE. | 1.047 | 182.5 | 3.18 |
| S.D. | 0.026 | 1.4 | 0.07 | ||
| B | AVE. | 1.089 | 183.1 | 3.08 | |
| S.D. | 0.021 | 1.7 | 0.07 | ||
| N | A | AVE. | 0.850 | -131.7 | 2.04 |
| S.D. | 0.010 | 1.5 | 0.05 | ||
| B | AVE. | 0.893 | -131.8 | 1.95 | |
| S.D. | 0.007 | 1.7 | 0.06 | ||
| Type | Group | 100℃(373K) | |||
| ρ 10-5Ωm |
S 10-6V/K |
S2/ρ 10-3W/mK2 |
|||
| P | A | AVE. | 1.328 | 193.9 | 2.83 |
| S.D. | 0.033 | 1.0 | 0.05 | ||
| B | AVE. | 1.357 | 193.2 | 2.75 | |
| S.D. | 0.025 | 1.9 | 0.05 | ||
| N | A | AVE. | 1.053 | -144.3 | 1.98 |
| S.D. | 0.012 | 1.0 | 0.04 | ||
| B | AVE. | 1.088 | -143.2 | 1.89 | |
| S.D. | 0.009 | 1.4 | 0.05 | ||
| Type | Group | 150℃(423K) | |||
| ρ 10-5Ωm |
S 10-6V/K |
S2/ρ 10-3W/mK2 |
|||
| P | A | AVE. | 1.660 | 201.2 | 2.44 |
| S.D. | 0.041 | 1.2 | 0.05 | ||
| B | AVE. | 1.693 | 200.2 | 2.37 | |
| S.D. | 0.031 | 1.5 | 0.04 | ||
| N | A | AVE. | 1.276 | -151.4 | 1.80 |
| S.D. | 0.014 | 1.0 | 0.03 | ||
| B | AVE. | 1.321 | -150.2 | 1.71 | |
| S.D. | 0.011 | 1.4 | 0.04 | ||
- Evaluation of homogeneity of Bi2Te3-based materials prepared by Hot-Press Method
-
AIST, ULVAC-RIKO,Inc.
Thermoelectric society 6th conference (2009)
