Toshima Manufacturing Co., Ltd. Materials System Division
TOSHIMA Manufacturing Co.,Ltd. Materials System Division
Toshima Manufacturing Co., Ltd. Materials System Division
Toshima Manufacturing Co., Ltd. Materials System Division

MOCVD precursor

It is important to select combinations of MOCVD precursors because the selection criteria such as reactivity, vaporization, and thermo-stability is different from required characteristics of films such as surface, electric, and mechanical properties.
Toshima has been developing and merchandising various types of MOCVD precursors in response to customers' needs. Especially, we focus on MOCVD precursors used for oxides.
By change of structure of β-diketone ligand or DPM-complex, we develop the materials with various physical properties.
Minimum unit for orders is 5 grams with not only a glass ample but a SUS cylinder following customers' request. Also, in collaboration with our research-partner, Meisei University, we analyze MOCVD precursors on how thin-film is formed.
Further, after investigation of MOCVD precursors, we make presentations for our academic papers in various conferences.

Available line of elements

H
He
Li
Be
B
C
N
O
F
Ne
Na
Mg
Al
Si
P
S
Cl
Ar
K
Ca
Sc
Ti
V
Cr
Mn
Fe
Co
Ni
Cu
Zn
Ga
Ge
As
Se
Br
Kr
Rb
Sr
Y
Zr
Nb
Mo
Tc
Ru
Rh
Pd
Ag
Cd
In
Sn
Sb
Te
I
Xe
Cs
Ba
Ln
Hf
Ta
W
Re
Os
Ir
Pt
Au
Hg
Tl
Pb
Bi
Po
At
Rn
Fr
Ra
La
Ce
Pr
Nd
Pm
Sm
Eu
Gd
Tb
Dy
Ho
Er
Tm
Yb
Lu
β-diketone ligand
Melting point and solubility of Zn complexes
Materialsm.p.(℃)Solubility
TolueneButyl AcetateTHF
Zn(TMOD)248SAS
Zn(DPM)2141ABA
Zn(IBPM)2<20AAA
Zn(DIBM)280SAS
Zn(acac)2138GGG

S:>1mol/l A:1-0.5mol/l B:0.5-0.33mol/l 
C:0.33-0.25mol/l D:0.25-0.2mol/l  E:0.2-0.15mol/l 
F:0.15-0.1mol/l G:<0.1mol/l

Dependance of Co deposition rate on precursor temprature
Comparison of TG curves of Incomplexes in Ar flow atmosphere

MOCVD precursor

We can regulate composition or density depending on the demand of customer. We work on the development of experimental materials.

Oxide semiconductor and conductive oxide materials

ZnO
NiO
TiO2
LaNiO3

Ferroelectric materials

Pb(Zr,Ti)O3
SrBi2Ta2O9
BiFeO3
(K,Na)NbO3/KNbO3/KTaO3
Sr2Nb[Ta]2O7
(Ba,Sr)TiO3
BaTiO3
LiNbO3

その他

(La,Sr)MnO3
(La,Sr)CoO3
SrTiO3
P-V hysteresis loop of 300nm spincoated PZT film
SEM image of spincoated LaNiO3 film
TG-DTA chart of LaNiO3 coating solution
XRD pattern of 200nm spincoated SrTiO3 film