Toshima Manufacturing Co., Ltd. Materials System Division
TOSHIMA Manufacturing Co.,Ltd. Materials System Division
Toshima Manufacturing Co., Ltd. Materials System Division
Toshima Manufacturing Co., Ltd. Materials System Division
Paper

Synthesis of nano-crystalline LiNbO3-decorated LiCoO2 and resulting high rate capabilities

Takashi Teranishia, Masahiro Inoharaa, Jun Kanoa, Hidetaka Hayashia, Akira Kishimotoa, Koji Yodab, Hidefumi Motobayashib, Yuzo Tasakib

aOkayama University, bToshima Manufacturing Co., Ltd.

Solid State Ionics, 314 57 (2018)

Temperature effects on cycling stability of Li plating/stripping on Ta-doped Li7La3Zr2O12

Fumihiro Yonemotoa, Atsuki Nishimuraa, Munekazu Motoyamaa, Nobuo Tsuchimineb, Susumu Kobayashib, Yasutoshi Iriyamaa,

aNagoya University, bToshima Manufacturing Co., Ltd.

J. Power Sources, 343 207 (2017).

High rate capability of a BaTiO3-decorated LiCoO2 cathode prepared via metal organic decomposition

Takashi Teranishi1, Naoto Katsuji1, Yumi Yoshikawa1, Mika Yoneda1, Hidetaka Hayashi1, Akira Kishimoto1, Koji Yoda2, Hidefumi Motobayashi2 and Yuzo Tasaki2

1Okayama University, 2Toshima Manufacturing Co., Ltd.

Jpn. J. Appl. Phys., 55 10TB01 (2016).

Room-temperature fabrication of highly oriented β-Ga2O3 thin films by excimer laser annealing

Daishi Shiojiria, Ryosuke Yamauchia, Daiji Fukudaa, Nobuo Tsuchimineb, Satoru Kanekoc, a, Akifumi Matsudaa, Mamoru Yoshimotoa

aTokyo Institute of Technology, bToshima manufacturing Co., Ltd., cKanagawa Industrial Technology Center

J. Cryst. Growth 424 38 (2015)

Direct growth of metallic TiH2 thin films by pulsed laser deposition

Kohei Yoshimatsu1, Takayuki Suzuki1, Nobuo Tsuchimine2, Koji Horiba3, 4, Hiroshi Kumigashira3, 4, Takayoshi Oshima1 and Akira Ohtomo1, 4

1Tokyo Institute of Technology, 2Toshima Manufacturing Co., Ltd., 3Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), 4 Materials Research Center for Element Strategy (MCES), Tokyo Institute of Technology

Applied Physics Express, Vol. 8 No. 3 035801 (2015).

Layer matching epitaxy of NiO thin films on atomically stepped sapphire (0001) substrates

Ryosuke Yamauchi1, Yosuke Hamasaki1, Takuto Shibuya2, Akira Saito2, Nobuo Tsuchimine3, Koji Koyama4, Akifumi Matsuda1 and Mamoru Yoshimoto1

1Tokyo Institute of Technology, 2Osaka University, 3Toshima Manufacturing Co., Ltd., 4Namiki Precision Jewel Co., Ltd.

Scientific Reports, 5 14385 (2015).

Conference Presentation

2018 Autumn

Characterization of LLZ type solid electrolyte sintered body

T.Onishi1, H.Motobayashi2, Y.Tasaki2, K.Kimoto2, K.Takada1

1.NIMS, 2.Toshima Manufacturing Co., Ltd.

The 59th Battery Symposium in Japan, 3A15

Structure modification of layered La-Ni-O epitaxial thin films by thermal treatment under uniaxial compression

S.Ito1, Y.Horimatsu1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 79th Japan Society of Applied Physics Autumn Meeting, 19p-PB8-23

Preparation of oxide thin film on periodic nanostructured polymer substrates

K.Iwasa1, T.Oga1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto11. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 79th Japan Society of Applied Physics Autumn Meeting, 19p-234A-9

Room Temperature Epitaxial Growth and Properties of Rock Salt Type Ni1-XFeXO Thin Films

Y.Ikeya1, N.Tsuchimine2, S.Kaneno3, 1, O.Seo 4, O.Sakata4,1, A.Matsuda1, M.Yoshimoto11. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center, 4.NIMS

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center, 4.NIMS

The 79th Japan Society of Applied Physics Autumn Meeting, 19p-P11-25

Examination of film formation factor of solid phase epitaxy in room temperature of amorphous Ga2O3 by excimer laser annealing

H.Morita1, T.Oga1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto11. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 79th Japan Society of Applied Physics Autumn Meeting, 20p-234A-5

Structure and characteristics of layered La-Ni-O thin films post-annealed under uniaxial compression

Y.Horimatsu1, S.Ito1, R.Namba1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto11. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 79th Japan Society of Applied Physics Autumn Meeting, 18p-PA2-6

Investigation of room temperature solid-phase crystallization process of β-Ga2O3 thin film by ultraviolet excimer lamp / laser irradiation

T.Oga1, H.Morita1, Y.Ikeya1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto11. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 79th Japan Society of Applied Physics Autumn Meeting, 18p-PA2-8

Thermoelectric power generator fabricated on a flexible printed circuit using sintered Bismuth Telluride bulk chips

K.Okawa1,Y.Amagai1,H.Fujiki1,N.Kaneko1,Y.Tasaki2,K.Ohata3,M.Okajima3,S.Nambu3

1.AIST, 2.Toshima Manufacturing Co., Ltd.,3. E-thermoGenteK Inc.

The 15th Annual Meeting of the Thermoelectrics Society of Japan, S3B2

2018 Spring

Dielectric SEI for All Solid State Lithium Ion Battery with High Power Density

M. Inohara1, Y. Yoshikawa1, T. Teranishi1, H. Hayashi1, A. Kishimoto1, T. Tanaka2, K. Yoda2, H. Motobayashi2 and Y. Tasaki2

1. Okayama Univ., 2. Toshima Manufacturing Co., Ltd.

2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference, P154A

Effect of film thickness and buffer layer on solid phase epitaxy of Ga2O3 by laser annealing

H.Morita1, K.Nakamura1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

Tokyo Inst. of Tech., 2. Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 65th Japan Society of Applied Physics Spring Meeting, 19p-P11-14

Effect of PLD Deposition Conditions on Structure and Properties of Room Temperature Grown Ni0.5Fe0.5O Epitaxial Thin Films

Y.Ikeya1, Y.Fujimoto1, N.Tsuchimine2, S.Kaneko3, 1, T.Usami1, T.Taniyama1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2. Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 65th Japan Society of Applied Physics Spring Meeting, 19p-P11-25

2017 Autumn

Development of ferroelectric SEI for an all solid state lithium ion battery with high power density

M.Inohara1, Y.Yoshikawa1, T.Teranishi1, H.Hayashi1, A.Kishimoto1, T.Tanaka2, K.Yoda2, H.Motobayashi2, Y.Tasaki2

1. Okayama Univ., 2.Toshima Manufacturing Co., Ltd.

The Ceramic Society of Japan The 30th Fall Meeting, 1PD09

Solid-phase crystallization and characterization of bismuth vanadate oxide thin films by thermal treatment under uniaxial compression

S.Ito1, R.Namba1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 78th Japan Society of Applied Physics Autumn Meeting, 8a-C24-5

Solid phase epitaxy of β- Ga2O3 on NiO self-assembly formed nanostructures by room-temperature laser process

H.Morita1, K.Nakamura1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 78th Japan Society of Applied Physics Autumn Meeting, 8a-PA4-25

Room Temperature Epitaxy and Characterization of Heavy Doped NiO:Fe Thin Films

Y.Ikeya1, Y.Fujimoto1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 78th Japan Society of Applied Physics Autumn Meeting, 6p-C23-11

Effect of buffer layer on solid phase epitaxy of β- Ga2O3 thin films by room temperature laser annealing

K.Nakamura1, H.Morita1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 78th Japan Society of Applied Physics Autumn Meeting, 7p-C17-6

Structural and characteristic modification of layered Lanthanum Nickelate thin films by post‐annealing under uniaxial compression

R.Namba1, S.Ito1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 78th Japan Society of Applied Physics Autumn Meeting, 6p-C23-5

2017 Spring

The control of the crystal phase and characteristics in MoOx thin films by the post-annealing under uniaxial compression

R.Namba 1, N.Tsuchimine 2, S.Kaneko 3, 1, A.Matsuda 1, M.Yoshimoto 1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 64th Japan Society of Applied Physics Spring Meeting, 15a-P5-2

Orientation control of β- Ga2O3 epitaxial thin films formed by room-temperature laser annealing

K.Nakamura1, H.Uchida1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 64th Japan Society of Applied Physics Spring Meeting, 14a-502-4

Synthesis and characterization of LiNbO3-LiCoO2 cathode for lithium ion battery with high rate capability

M.Inohara1, N.Katsuji1, Y.Yoshikawa1, T.Teranishi1, H.Hayashi1, A.Kishimoto1, K.Yoda2, H.Motobayashi2, Y.Tasaki2

1. Okayama Univ., 2.Toshima Manufacturing Co., Ltd.

The Ceramic Society of Japan Annual Meeting 2017, 1P019

2016 Autumn

Buffer-induced room-temperature epitaxy of β-Ga2O3 thin film by excimer laser annealing

A.Matsuda1, D.Shiojiri1, H.Uchida1, K.Nakamura1, N.Tsuchimine2, S.Kaneko3, 1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

26th Annual Meeting of The Materials Research Society of Japan (MRS-J), A3-O20-003

Room-temperature epitaxy and characterization of Fe-doped NiO thin films

S.Takano1, Y.Fujimoto1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 77th Japan Society of Applied Physics Autumn Meeting, 14p-A37-8

Phase and property control of MoOx epitaxial thin films by post-annealing under uniaxial compression

R.Namba1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 77th Japan Society of Applied Physics Autumn Meeting, 14p-A37-11

Low-temperature solid-phase epitaxial crystallization of impurity-doped β- Ga2O3 thin films by excimer laser annealing

H.Uchida1, K.Nakamura 1, N.Tsuchimine2, K.Koyama3, S.Kaneko4, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3.Namiki Precision Jewel Co., Ltd., 4. Kanagawa Industrial Technology Center

The 77th Japan Society of Applied Physics Autumn Meeting, 14p-A37-12

Influence of NiO buffer layer on solid phase epitaxy of β- Ga2O3 thin films by laser annealing at room temperature

K.Nakamura 1, H.Uchida1, N.Tsuchimine2, K.Koyama3, S.Kaneko4, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3.Namiki Precision Jewel Co., Ltd., 4. Kanagawa Industrial Technology Center

The 77th Japan Society of Applied Physics Autumn Meeting, 2016, 14p-P10-9

Preparation of Amorphous Lipon Electrolyte Particles Using the Polygonal-Barrel Plasma Treatment System

Hideki Nishizawa1, Hiroaki Iwane2, Yuzo Tasaki2, Hideshi Kikuyama2, Yuji Honda3 and Takayuki Abe1

1.University of Toyama, 2. Toshima Manufacturing Co., Ltd., 3. Youtec Corporation

PRiME Meeting, A04-0592

2016 Spring

Solid-phase crystallization of amorphous molybdenum oxide thin films via post-annealing under uniaxial compression

R.Namba1, Y.Nozawa1, G.Tan1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 63th Japan Society of Applied Physics Spring Meeting, 21a-H103-5

Low-temperature solid-phase epitaxial crystallization of buffer layer induced β- Ga2O3 films by excimer laser annealing

H.Uchida1, D.Shiojiri1, D.Fukuda1, N.Tsuchimine2, K.Koyama3, S.Kaneko4, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3.Namiki Precision Jewel Co., Ltd., 4. Kanagawa Industrial Technology Center

The 63th Japan Society of Applied Physics Spring Meeting, 20a-W321-6

Synthesis and characterization of perovskite dielectrics-LiCoO2 composite cathode via MOD route

N.Katsuji 1, Y.Yoshikawa 1, M.Yoneda 1, T.Teranishi 1, H.Hayashi 1, A.Kishimoto 1, K.Yoda 2, H.Motobayashi 2, Y.Tasaki 2

1. Okayama Univ., 2.Toshima Manufacturing Co., Ltd.

The Ceramic Society of Japan Annual Meeting 2016, 1P168

Low temperature epitaxy of wide bandgap β-Ga2O3 thin films by laser processing

A.Matsuda1, D.Shiojiri1, D.Fukuda1, H.Uchida1, M.Yoshimoto1, N.Tsuchimine2, S.Kaneko3

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The Ceramic Society of Japan Annual Meeting 2016, 1E20

2015 Autumn

Solid-phase Epitaxial Crystallization of Ga2O3 Thin films by Pulsed KrF Excimer Laser Annealing Towards Low-Temperature Device Fabrication

Daishi Shiojiri1, Koji Koyama1, Akifumi Matsuda1, Mamoru Yoshimoto1, Nobuo Tsuchimine2, Satoru Kaneko3

1.Tokyo Inst. of Technol., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Indust. Technol. Center

2015 MRS Fall Meeting, RR3.02

The surface of LLZ sintered body

T.Ohnishi1, K.Iwatani2, H.Motobayashi2, K.Takada1

1.NIMS,2.Toshima Manufacturing Co., Ltd.

The 41st Symposium on Solid State Ionics in Japan, 3A01

Effect of excimer laser irradiation condition on solid phase crystallization, structure and optical property of Ga2O3 thin films

H.Uchida1, D.Shiojiri1, D.Fukuda1, N.Tsuchimine2, K.Koyama3, S.Kaneko4, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3.Namiki Precision Jewel Co., Ltd., 4. Kanagawa Industrial Technology Center

The 76th Japan Society of Applied Physics Autumn Meeting, 14p-PA10-3

Epitaxial growth and characterization of rare-earth doped NiO thin films

S.Takano1, D.Fukuda1, D.Shiojiri1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 76th Japan Society of Applied Physics Autumn Meeting,14p-PA10-4

Room temperature fabrication of β- Ga2O3 epitaxial thin films on NiO-buffered α-Al2O3 (0001) by KrF excimer laser annealing

D.Shiojiri 1, D.Fukuda 1, H.Uchida1, S.Takano1, N.Tsuchimine2, K.Koyama3, S.Kaneko4, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3.Namiki Precision Jewel Co., Ltd., 4. Kanagawa Industrial Technology Center

The 76th Japan Society of Applied Physics Autumn Meeting, 15a-1B-5

Solid-phase crystallization of wide bandgap Ga2O3 thin films by room-temperature UV excimer laser annealing

D.Shiojiri 1, D.Fukuda 1, H.Uchida1, N.Tsuchimine2, K.Koyama3, S.Kaneko4, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3.Namiki Precision Jewel Co., Ltd., 4. Kanagawa Industrial Technology Center

The Ceramic Society of Japan The 28th Fall Meeting, 2PA01

2015 Spring

NiO buffer layer enhanced low-temperature epitaxial growth of β-Ga2O3 thin films by PLD

D.Fukuda1, D.Shiojiri1, R.Yamauchi1, N.Tsuchimine2, S.Kaneko3, 1, A.Matsuda1, M.Yoshimoto1

1. Tokyo Inst. of Tech., 2.Toshima Manufacturing Co., Ltd., 3. Kanagawa Industrial Technology Center

The 62th Japan Society of Applied Physics Spring Meeting, 13p-D1-9

Preparation of highly ion conductive LiPON particles using the polygonal-barrel plasma treatment

H.Iwane1, H.Nishizawa2, M.Inoue2, H.Kikuyama1, Y.Tasaki1, Y.Honda3, T.abe2

1.Toshima Manufacturing Co., Ltd., 2.Toyama Univ., 3.Youtec Co., Ltd.

The Electrochemical Society of Japan, The 82nd Spring Meeting, 1K22

Paper and Conference Presentation